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Growth manners of c-axis oriented YBa_2Cu_3O_x thin films

机译:c轴取向YBa_2Cu_3O_x薄膜的生长方式

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We have directly observed an early growth manner of c-axis oriented YBa_2Cu_3O_x films by a pulsed laser deposition technique grown on off-cut substrates. YBa_2Cu_3O_x thin films grown by ArF pulsed laser deposition on 1.7 deg off cut NdGaO_3 (110) substrates are observed by a field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM) and cross sectional view transmission electron microscope (TEM). From the FE-SEM observation, rugged step edges are clearly observed. YBa_2Cu_3O_x grows along the direction perpendicular to the c-axis of YBa_2Cu_3O_x. XRD measurements have revealed the films are c-axis preferred oriented normal to the (110)-plane of the NdGaO_3 substrates. SEM, AFM and TEM measurements show the film surface to have terraces and steps. The steps are bunched and estimated to be multi(2-5-unit-cell height)-steps. Step edges provide nucleation site for YBa_2Cu_3O_x thin films and weaken the generation of spiral growth and enhance step flow growth. This step flow growth of c-axis oriented YBa_2Cu_3O_x films may reduce grain boundaries, which increase surface resistance (R_s) for microwave devices.
机译:我们已经直接观察到了通过切割衬底上生长的脉冲激光沉积技术对c轴取向的YBa_2Cu_3O_x薄膜的早期生长方式。通过场发射扫描电子显微镜(FE-SEM),原子力显微镜(AFM)和横截面透射电子显微镜(TEM)观察通过ArF脉冲激光沉积在1.7度偏斜NdGaO_3(110)衬底上生长的YBa_2Cu_3O_x薄膜。 。从FE-SEM观察中,可以清楚地观察到崎step的台阶边缘。 YBa_2Cu_3O_x沿垂直于YBa_2Cu_3O_x的c轴的方向生长。 XRD测量表明,这些膜的c轴方向优选垂直于NdGaO_3衬底的(110)平面。 SEM,AFM和TEM测量表明薄膜表面有台阶和台阶。这些步骤被汇总并估计为多个(2-5个单元格高度)步骤。台阶边缘为YBa_2Cu_3O_x薄膜提供了成核点,并减弱了螺旋生长的产生并增强了台阶流的生长。 c轴取向的YBa_2Cu_3O_x膜的此阶跃式流动生长可能会减小晶界,从而增加微波器件的表面电阻(R_s)。

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