首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Self-assembled c-axis oriented 6-MoN thin films on Si substrates by chemical solution deposition: Growth, transport and superconducting properties
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Self-assembled c-axis oriented 6-MoN thin films on Si substrates by chemical solution deposition: Growth, transport and superconducting properties

机译:通过化学溶液沉积在Si基材上进行6周半薄膜的自组装C轴定向:生长,运输和超导性能

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摘要

Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T. Here, polycrystalline I-MoN thin films with self-assembled c-axis orientation are directly deposited onto Si substrates by chemical solution deposition under ambient NH3 annealing atmosphere without high pressure processing. The prepared delta-MoN/Si thin films show T-c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by BlochGrilneisen expression. The results will provide an effective route to prepare large-area delta-MoN/Si thin films with high T-c as well as a guidance to investigate the fundamental properties of polycrystalline delta-MoN thin films.(C) 2017 Elsevier B.V. All rights reserved.
机译:氮化钼Mo-N被认为是最硬的超导金属氮化物,其通常在高压和高温下制备,以获得高超导转变温度T.这里,具有自组装的C轴取向的多晶I-Mon薄膜直接 通过在环境NH3退火气氛下通过化学溶液沉积在没有高压加工的情况下沉积在Si底物上。 制备的Delta-Mon / Si薄膜显示出高于12 K的T-C.正常状态电阻率Obeys电子 - 声子散射机构,可以通过Blochgrilneisen表达良好装配。 结果将提供一种有效的途径,用于制备具有高T-C的大型Δ-mon / Si薄膜以及研究多晶三段薄膜的基本性质的指导。(c)2017年Elsevier B.v.保留所有权利。

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