首页> 外国专利> EXPOSURE SYSTEM, METHOD FOR REPLACING GAS, METHOD OF MANUFACTURING DEVICE, SEMICONDUCTOR MANUFACTURING PLANT, AND MAINTENANCE METHOD

EXPOSURE SYSTEM, METHOD FOR REPLACING GAS, METHOD OF MANUFACTURING DEVICE, SEMICONDUCTOR MANUFACTURING PLANT, AND MAINTENANCE METHOD

机译:曝光系统,更换气体的方法,制造装置的方法,半导体制造厂和维护方法

摘要

PROBLEM TO BE SOLVED: To quickly lower the concentration of the gas in a chamber at the beginning. ;SOLUTION: An exposure system is provided with a chamber surrounding a prescribed space, a first supply device that supplies a first gas into the chamber, and a second supply device that supplies a second gas different from the first gas into the chamber. The system is also provided with a switch mechanism which supplies either one of the gases into the chamber by switching the first and second supply devices to each other. Consequently, the stagnating gas replaced conventionally by molecular diffusion only can be replaced quickly.;COPYRIGHT: (C)2001,JPO
机译:要解决的问题:开始时要迅速降低反应室内的气体浓度。解决方案:曝光系统配备有围绕规定空间的腔室,将第一气体供应到腔室中的第一供应装置和将不同于第一气体的第二气体供应到腔室中的第二供应装置。该系统还设置有开关机构,该开关机构通过将第一供应装置和第二供应装置彼此切换来将一种气体供应到腔室中。因此,传统上只能用分子扩散代替的滞留气体可以很快地被替代。;版权所有:(C)2001,日本特许厅

著录项

  • 公开/公告号JP2001284211A

    专利类型

  • 公开/公告日2001-10-12

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20000093687

  • 发明设计人 YABU SHUICHI;

    申请日2000-03-30

  • 分类号H01L21/027;G03F7/22;

  • 国家 JP

  • 入库时间 2022-08-22 01:34:19

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