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Read/write manner null of ram and the read/write circuit, and data

机译:ram和读/写电路的读/写方式为空,以及数据

摘要

Maximum operating speed is achieved in an array of memory cells by performing both read and write operations within a single memory cycle. As outgoing data are read from the memory cells, incoming data are stored immediately in those cells. Once data are read from the memory cells, a latch signal is generated (in 32) to trigger latching (in 34) of the read data for output to a data bus (14). The same latch signal that is used to latch the read data initiates (in 36) the writing of new data to the memory cells. Use of a single latch signal in this manner ensures that new data are not written to the memory cells until the existing data has been read from those cells. IMAGE
机译:通过在单个存储周期内执行读取和写入操作,可以在一个存储单元阵列中实现最大工作速度。当从存储单元读取输出数据时,输入数据立即存储在这些单元中。一旦从存储单元中读取了数据,就产生锁存信号(在32中)以触发锁存(在34中)读取的数据以输出到数据总线(14)。用于锁存读取的数据的相同锁存信号启动(在36中)将新数据写入存储单元。以这种方式使用单个锁存信号可确保在从那些存储单元读取现有数据之前,不将新数据写入存储单元。 <图像>

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