CVD reactor null for titanium oxide based dielectric thin film synthesis

摘要

PURPOSE: To synthesize a dielectric thin film excellent in characteristics by a method wherein a pre-reaction section by at least either heating or active oxidizing gas is provided before a primary reaction section. ;CONSTITUTION: A pre-reaction section 16 by at least either heating or active oxidizing gas is provided before a primary reaction section. The pre-reaction section is equipped with a heating mechanism to be heated up to an optional temperature by the heater provided to its outside and also equipped with a metal structure which is excellent in thermal conductivity and provided with a large number of holes through which pre-reaction material gas is made to blow off to easily heat material gas. Gas heated in the pre-reaction section 16 provided with a heating mechanism is made to form an intermediate product which is not fully decomposed under a specific condition but fully decomposed and oxidized with ease in a later process, which is conductive to that an excellent thin film is formed on a substrate 13.;COPYRIGHT: (C)1994,JPO&Japio