Production manner of disordered conversion crystalline structure, production manner of semiconductor laser and production manner null of window structural semiconductor

摘要

PROBLEM TO BE SOLVED: To provide a process for the production of a disordered crystal structure to enable easy production of a disordered crystal structure free from spontaneous ordering of the crystal constituting atoms, a process for the production of a semiconductor laser containing an excellent MQW active layer and having a narrow luminescent spectrum width and high gain and a process for the production of a simple window-structure semiconductor laser having high controllability and producible without using Zn diffusion process. ;SOLUTION: A crystal having a disordered crystal structure 250 is formed on or near a substrate 200 by a crystal growth method using a surfactant. The surfactant varies the surface energy during the crystal growth and disturbs the surface rearrangement structure. Accordingly, a uniformly disordered semiconductor laser having good MQW structure can be produced on the substrate. A window-structure semiconductor laser having good controllability can be realized without using an unnecessary heat-history such as Zn diffusion by growing a crystal after depositing the surfactant on the substrate in the form of a pattern.;COPYRIGHT: (C)1999,JPO