SUSCEPTOR FOR CRYSTAL GROWTH AND CRYSTAL GROWTH DEVICE, AND EPITAXIAL WAFER AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To provide the subject device intended for the epitaxial growth of a single crystal on the surface of a substrate by making a reactant gas flow on the surface of the substrate at elevated temperatures while making the heat content per unit area of the peripheral rim of the substrate mount area of a susceptor lower than that at the central part of the mount area so as to improve both the film thickness uniformity and impurity concentration uniformity in the single crystal plane.;SOLUTION: This device works as follows: a silicon substrate W is placed on a recess provided on the mount area 12a of a disc-shaped susceptor 12 made of carbon or the like and turned via a rotating shaft member inserted into an engagement hole 12d provided on the reverse side of the peripheral area 12b; a reactant gas comprising silane gas and dopant gas is then made to flow on the surface of the substrate W while heating the substrate W to e.g. about 1,130°C by the aid of halogen lamps or the like disposed therearound to accomplish epitaxial growth of a silicon single crystal on the substrate W; in producing the epitaxial wafer, an annular groove 12c is provided on the peripheral rim of the mount area 12a of the susceptor 12, or a projection is provided at the central part to make the heat content of the peripheral rim lower than that at the central part, thereby making the temperature of the peripheral rim of the substrate W lower.;COPYRIGHT: (C)2001,JPO