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TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, THIN MAGNETIC FILM HEAD, MEMORY ELEMENT, AND MANUFACTURING METHOD FOR THEM
TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, THIN MAGNETIC FILM HEAD, MEMORY ELEMENT, AND MANUFACTURING METHOD FOR THEM
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机译:隧道磁阻效应元件,薄磁膜头,存储器元件及其制造方法
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摘要
PROBLEM TO BE SOLVED: To prevent formation of extra current paths which do not contribute to tunnel magnetoresistive effect. ;SOLUTION: A TMR element 3 has a free layer 11 formed on a lower gap layer 2, a tunnel barrier layer 12 formed on this free layer 11, and a pinned layer 13 formed on this tunnel barrier layer 12. The pinned layer 13 and the tunnel barrier layer 12 have a side wall 14 formed by etching. The TMR element 3 comprises a redeposited layer 15 of an oxidized substance redeposited on the side wall 14 by further etching.;COPYRIGHT: (C)2001,JPO
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