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TEMPERATURE MEASURING DEVICE, THERMAL INFRARED IMAGE SENSOR AND METHOD FOR MEASURING TEMPERATURE

机译:温度测量装置,热红外图像传感器及温度测量方法

摘要

PROBLEM TO BE SOLVED: To allow a semiconductor diode having at least one forwardly biased potential barrier to be used as a temperature sensor capable of being finely adjusted at its temperature sensitivity. SOLUTION: When a forwardly biasing voltage of a DC or a rectangular waveform is applied to the semiconductor diode D having the potential barrier as the temperature sensor, an operational amplifier A1 is used. The bias voltage is finely adjusted by applying the bias voltage output from a bias voltage circuit 2 directly to the diode D by utilizing the fact that a height of the potential barrier of the diode D decides its temperature sensitivity. Thus, a desired temperature sensitivity is obtained, and an output voltage relative to a current having an exponentially functional temperature dependency and flowing to the diode D when the bias voltage is applied is obtained.
机译:解决的问题:允许将具有至少一个正向偏置的势垒的半导体二极管用作能够对其温度灵敏度进行精细调节的温度传感器。解决方案:将直流或矩形波形的正向偏置电压施加到具有势垒的半导体二极管D作为温度传感器时,将使用运算放大器A1。通过利用从二极管D的势垒的高度决定其温度敏感性的事实,通过将从偏压电路2输出的偏压直接施加到二极管D,来精细地调节偏压。因此,获得了期望的温度灵敏度,并且获得了相对于具有指数函数温度依赖性并且当施加偏置电压时流向二极管D的电流的输出电压。

著录项

  • 公开/公告号JP2001264176A

    专利类型

  • 公开/公告日2001-09-26

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY CORP;

    申请/专利号JP20000288612

  • 发明设计人 KIMURA MITSUTERU;

    申请日2000-09-22

  • 分类号G01J5/22;G01J1/42;G01J1/44;G01J5/48;G01K7/01;H01L27/14;H01L27/146;H01L35/00;H04N5/33;

  • 国家 JP

  • 入库时间 2022-08-22 01:31:30

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