首页> 外国专利> PHOTOSENSITIVE RESIN, RESIST COMPOSITION USING PHOTOSENSITIVE RESIN, METHOD OF PATTERN FORMATION USING RESIST COMPOSITION, DEVICE PRODUCED BY METHOD THEREOF AND METHOD OF EXPOSURE USING RESIST HAVING PHOTOSENSITIVE RESIN

PHOTOSENSITIVE RESIN, RESIST COMPOSITION USING PHOTOSENSITIVE RESIN, METHOD OF PATTERN FORMATION USING RESIST COMPOSITION, DEVICE PRODUCED BY METHOD THEREOF AND METHOD OF EXPOSURE USING RESIST HAVING PHOTOSENSITIVE RESIN

机译:光敏树脂,使用光敏树脂的抗蚀剂组合物,使用抗蚀剂组合物形成图案的方法,用其制备的装置以及使用具有光敏性树脂的抗蚀剂进行曝光的方法

摘要

PROBLEM TO BE SOLVED: To obtain a photosensitive resin excellent in solubility in solvents and dry etching resistance which allows to easily produce a highly integrated semiconductor device. ;SOLUTION: This photosensitive resin has at least three kinds of parts containing an alicyclic group part and a sulfonyl part in a main chain. Besides, The photosensitive resin preferably has a vinyl monomer part in the main chain and the vinyl monomer part preferably has the alicyclic group in a side chain.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:获得在溶剂中的溶解性和耐干蚀刻性优异的光敏树脂,这使得可以容易地生产高度集成的半导体器件。 ;解决方案:该光敏树脂具有至少三种在主链中包含脂环族部分和磺酰基部分的部分。此外,光敏树脂优选在主链中具有乙烯基单体部分,并且在侧链中优选乙烯基单体部分。COPYRIGHT:(C)2001,JPO

著录项

  • 公开/公告号JP2001106785A

    专利类型

  • 公开/公告日2001-04-17

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20000229478

  • 申请日2000-07-28

  • 分类号C08G75/22;C08F8/34;C08F232/00;C08K5/00;C08L25/18;C08L33/06;C08L45/00;C08L61/08;C08L83/04;C08L97/00;C08L101/06;G03F7/039;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:43

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