首页> 外国专利> THERMAL CONDUCTION TYPE SEED CRYSTAL FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL AND GROWTH OF SINGLE CRYSTAL BY THE THERMAL CONDUCTION TYPE SEED CRYSTAL

THERMAL CONDUCTION TYPE SEED CRYSTAL FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL AND GROWTH OF SINGLE CRYSTAL BY THE THERMAL CONDUCTION TYPE SEED CRYSTAL

机译:用于生产半导体单晶的导热型晶种,以及通过导热型晶种的单晶生长

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a single crystal by immersing a seed crystal in a melt and pulling and growing the single crystal without causing necking in the production of a semiconductor single crystal by a Czochralski method. ;SOLUTION: This thermal conduction type seed crystal 10 is constituted of a growing seed 1 whose lower end is immersed in a melt to grow a semiconductor single crystal, a thermal conduction member 2 which is attached to the growing seed 1 and immersed in the melt before the growing seed 1 is immersed in the melt to transfer the heat of the melt to the growing seed 1 and a quartz cylinder 3 for covering the thermal conduction member 2. The thermal conduction member 2 is attached to the growing seed 1 so as to surround the growing seed and has plural slits 2c arranged in the vertical direction from the lower part to the bottom part. The quartz cylinder 3 has the same number of inverted wedge-shaped notch parts as that of the slits 2c and wedge- shaped parts 3b formed between two adjoining notch parts are mutually different in length in the vertical direction.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种通过将籽晶浸入熔体中并拉长并生长单晶而不会在通过Czochralski法生产半导体单晶的过程中引起颈缩的方法来生长单晶。 ;解决方案:该导热型籽晶10由生长籽晶1构成,其下端浸入熔体中以生长半导体单晶,导热部件2附着在生长籽晶1上并浸入熔体中在将种籽1浸入熔体中以将熔体的热量传递给种籽1和石英圆柱体3以覆盖导热构件2之前,将导热构件2连接到种籽1上,以便围绕生长的种子,并具有从下部到底部在垂直方向上排列的多个狭缝2c。石英圆柱体3具有与狭缝2c相同数量的倒置楔形凹口部分,并且在两个相邻的凹口部分之间形成的楔形部分3b在竖直方向上长度互不相同。版权所有:(C)2000 ,日本特许厅

著录项

  • 公开/公告号JP2000313693A

    专利类型

  • 公开/公告日2000-11-14

    原文格式PDF

  • 申请/专利权人 KOMATSU ELECTRONIC METALS CO LTD;

    申请/专利号JP19990117809

  • 发明设计人 KUROSAKA SHOEI;

    申请日1999-04-26

  • 分类号C30B15/32;C30B29/06;H01L21/208;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:13

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