CERAMIC SUBSTRATE FOR SEMICONDUCTOR PROCESS AND FOR TESTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a ceramic substrate for realizing a practically uniform distribution of temperatures on a face thereof, on which a semiconductor wafer is treated.;SOLUTION: The ceramic substrate has a conductive body in the surface or the inside thereof. The ceramic substrate contains oxygen has a shape like a disk with a diameter more than 250 mm and a thickness of 25 mm or below.;COPYRIGHT: (C)2001,JPO