首页> 外国专利> HEAT INSULATING STRUCTURE, SEMICONDUCTOR MICROACTUATOR USING THE SAME, SEMICONDUCTOR MICROVALVE, AND SEMICONDUCTOR MICRORELAY

HEAT INSULATING STRUCTURE, SEMICONDUCTOR MICROACTUATOR USING THE SAME, SEMICONDUCTOR MICROVALVE, AND SEMICONDUCTOR MICRORELAY

机译:隔热结构,使用相同结构的半导体微致动器,半导体微阀和半导体微层

摘要

PROBLEM TO BE SOLVED: To provide a heat insulating structure having a high heat insulating efficiency and manufactured through simple processes, a semiconductor microactuator using the same, a semiconductor microvalve, and a semiconductor microrelay. ;SOLUTION: Four outwardly extending flexible areas 2 joined to a central moving element 5 are joined to a semiconductor substrate 3 via heat insulating areas 7 made from a heat insulating material such as polyimide or fluororesin, the semiconductor substrate 3 serving as a frame. The heat insulating areas 7 are provided within the thickness of the flexible area 2 between the semiconductor substrate 3 and the flexible area 2 in such a way as to be about as thick as the flexible area 2. When the flexible areas 2 are heated by heating means 6 consisting of impurity diffusion resistances or the like provided on the surfaces of the flexible areas 2, the flexible areas 2 flex because of a difference in thermal expansion from thin films 4 of aluminum or nickel provided on the flexible areas 2, and the movable element 5 is displaced.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:为了提供具有高隔热效率并且通过简单工艺制造的隔热结构,使用该隔热结构的半导体微致动器,半导体微阀和半导体微继电器。解决方案:连接到中央移动元件5的四个向外延伸的柔性区域2通过由诸如聚酰亚胺或氟树脂之类的绝热材料制成的绝热区域7与半导体衬底3结合,半导体衬底3用作框架。在半导体基板3与挠性区域2之间的挠性区域2的厚度内,以与挠性区域2相同的厚度设置有隔热区域7。由设置在挠性区域2的表面上的杂质扩散阻力等组成的装置6,挠性区域2由于与设置在挠性区域2上的铝或镍的薄膜4的热膨胀的差异而挠曲,并且可移动元素5已移位。;版权:(C)2000,日本特许厅

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