首页> 外国专利> METHOD FOR ADJUSTING SCALE BAR OF ELECTRON MICROSCOPE USING PERIODICAL WAVEFORM ON VERTICAL SIDE WALL OF PHOTO RESIST LAYER

METHOD FOR ADJUSTING SCALE BAR OF ELECTRON MICROSCOPE USING PERIODICAL WAVEFORM ON VERTICAL SIDE WALL OF PHOTO RESIST LAYER

机译:利用光阻层垂直侧壁上的周期性波形调整电子显微尺度棒的方法

摘要

PROBLEM TO BE SOLVED: To adjust the micro bar of an electron microscope by forming a vertical side wall around the specific region of a photo resist layer, and determining wavelength with a periodical shape of the vertical side wall according to the wavelength of light and the refractive index of the photo resist layer. ;SOLUTION: A photo resist layer 22 is formed on the surface of a semiconductor wafer 20, a specific region on the photo resist layer 22 is exposed to light with a far ultraviolet laser beam with short wavelength being generated by krypton fluoride or argon fluoride and is subjected to development, thus forming column structure 26. Then, a vertical side wall 28 with a periodical waveform in a shape similar to a sinusoidal waveform is formed on the side surface of the column structure 26, and the wavelength of the periodical shape of the vertical side wall 28 is determined by the refractive index between a light wave and the photo resist layer 22, thus adjusting the micro bar of an electron microscope.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:通过在光致抗蚀剂层的特定区域周围形成垂直侧壁,并根据光的波长和光的波长确定具有周期性侧壁形状的波长,来调整电子显微镜的微条。光刻胶层的折射率。 ;解决方案:在半导体晶片20的表面上形成光致抗蚀剂层22,光致抗蚀剂层22上的特定区域暴露于由氟化k或氟化氩和进行显影,从而形成柱状结构26。然后,在柱状结构26的侧表面上形成具有类似于正弦波形的周期性波形的垂直侧壁28,并且该周期性侧壁的波长为垂直侧壁28由光波和光致抗蚀剂层22之间的折射率确定,从而调节电子显微镜的微条。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001044252A

    专利类型

  • 公开/公告日2001-02-16

    原文格式PDF

  • 申请/专利权人 UNITED MICROELECTRON CORP;

    申请/专利号JP19990209528

  • 发明设计人 RIN CHII-YUN;FUWAN JIUN-RUENU;

    申请日1999-07-23

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 01:29:07

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