PRECURSORY SUBSTANCE BLEND OF ORGANIC COPPER AND METHOD FOR DEPOSITING COPPER BY CHEMICAL VAPOR DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing copper having a blend of the precursor of trimethylvinylsilane copper increasing stability on a wafer and to obtain the low specific resistance of copper.;SOLUTION: The film of copper having improved characteristics is deposited from the precursor of organic copper of a blend of copper, hexafluoroacetylacetonate, trimethylvinyl-silane and about 1.0 to 5.0 wt.% trimethylvinylsilane vaporized in a vaporizer 14 and passed through a chemical vapor deposition chamber by chemical vapor deposition. Separately, water vapor to 2 wt.% of the precursor is directly added to the chamber. In this way, the film of copper having lower specific resistance, higher deposition speed, higher reflectance and higher thermal stability compared to those of the conventional one can be obtd.;COPYRIGHT: (C)2001,JPO