PROBLEM TO BE SOLVED: To provide a radiation detector capable of detecting radiation well with excellent sensitivity without causing the separation and warping of a film and electrodes even with a large area.;SOLUTION: The semiconductor polycrystalline film (a conversion layer) 1 forming a carrier sensing radiation, that is, a detection object, is provided between the electrode 1b formed on a support base 0, and the picture element electrodes 1a formed corresponding to a detecting element. The semiconductor polycrystalline film is formed of a CdTe film or a CdZnTe film, and the support base 0 is formed by sintering either one or a mixture, mixed at an optional ratio, of aluminum oxide, aluminum nitride, boron nitride, silicon oxide and silicon nitride with high X-ray transmissivity and close in the thermal expansion coefficient to the CdTe and CdZnTe materials of the polycrystalline semiconductor thin film.;COPYRIGHT: (C)2001,JPO
展开▼