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RADIATION DETECTOR, ARRAYED RADIATION DETECTOR AND TWO- DIMENSIONAL RADIATION IMAGE PICKUP DEVICE

机译:辐射探测器,阵列辐射探测器和二维辐射图像拾取装置

摘要

PROBLEM TO BE SOLVED: To provide a radiation detector capable of detecting radiation well with excellent sensitivity without causing the separation and warping of a film and electrodes even with a large area.;SOLUTION: The semiconductor polycrystalline film (a conversion layer) 1 forming a carrier sensing radiation, that is, a detection object, is provided between the electrode 1b formed on a support base 0, and the picture element electrodes 1a formed corresponding to a detecting element. The semiconductor polycrystalline film is formed of a CdTe film or a CdZnTe film, and the support base 0 is formed by sintering either one or a mixture, mixed at an optional ratio, of aluminum oxide, aluminum nitride, boron nitride, silicon oxide and silicon nitride with high X-ray transmissivity and close in the thermal expansion coefficient to the CdTe and CdZnTe materials of the polycrystalline semiconductor thin film.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种放射线检测器,其能够以良好的灵敏度很好地检测放射线,即使在大面积下也不会引起膜和电极的分离和翘曲。解决方案:形成多晶的半导体多晶膜(转换层)1在形成于支撑基体0上的电极1b与对应于检测元件而形成的像素电极1a之间,设置有载流子检测放射线即检测对象。半导体多晶膜由CdTe膜或CdZnTe膜形成,并且支撑基体0通过烧结以任意比例混合的氧化铝,氮化铝,氮化硼,氧化硅和硅中的一种或混合物形成。具有高X射线透射率且热膨胀系数与多晶半导体薄膜的CdTe和CdZnTe材料接近的氮化物。; COPYRIGHT:(C)2001,JPO

著录项

  • 公开/公告号JP2001242256A

    专利类型

  • 公开/公告日2001-09-07

    原文格式PDF

  • 申请/专利权人 SHIMADZU CORP;

    申请/专利号JP20000053188

  • 发明设计人 TOKUDA SATOSHI;

    申请日2000-02-29

  • 分类号G01T1/24;G01T1/29;G01T7/00;H01L27/14;H01L31/09;H04N5/32;H04N5/335;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:56

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