METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR PRODUCING GROUP III NITRIDE LIGHT EMISSION ELEMENT, AND GROUP III NITRIDE LIGHT EMISSION ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve crystallinity of AlGaN layer. ;SOLUTION: Clad layers 404 and 408 of group III nitride semiconductor laser are each formed of In-doped Al0.1Ga0.9N having 1 μm thickness, in which In is introduced at 100°C growth temperature. Crystallinity of AlGaN layer is improved by dope of In. Thereby, group III nitride semiconductor laser having good crystallinity and thick clad layer can be produced while making infuence exerted to band gap negligibly small and enables single and lateral mode oscillation and makes threshold electric current small.;COPYRIGHT: (C)2001,JPO