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THIN-FILM TYPE ELECTRON SOURCE AND MANUFACTURE THEREFOR AND THIN-FILM TYPE ELECTRON SOURCE APPLIED APPARATUS

机译:薄膜型电子源及其制造方法以及薄膜型电子源适用设备

摘要

PROBLEM TO BE SOLVED: To avoid lowering in electron emitting efficiency and to improve yield by electrically separating respective upper electrodes each upper bus electrode by step difference parts of respective first insulating films which have step difference parts extended outside from the side surfaces of a first/second bus electrodes of respective upper bus electrodes. ;SOLUTION: In a thin electron source matrix, an upper bus line is composed of a laminated film composed of a thin bus electrode lower layer 15 and a thick bus electrode upper layer 16, and an insulating layer 17 is formed on the bus electrode upper layer 16. Thus, an upper electrode film formed from above it is cut by a step difference structure formed of the insulating layer 17 and the bus electrode upper layer 16, to be worked as an upper electrode 13. Such constitution can obviate a photo processes for working the upper electrode, and an ashing process for cleaning the upper electrode surface, for inexpensively manufacturing a thin-film type electrons source having high electron emitting efficiency and a high yield.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:为了避免电子发射效率的降低并且通过将各个上部总线电极通过各个第一绝缘膜的阶梯差部分电分离各个上部总线电极来实现,其中,各个第一绝缘膜的阶梯差部分从第一/第二侧面的外侧延伸到外侧。各个上总线电极的第二总线电极。 ;解决方案:在薄电子源矩阵中,上总线是由薄的总线电极下层15和厚的总线电极上层16组成的层压膜组成的,绝缘层17形成在总线电极上层因此,通过由绝缘层17和汇流电极上层16形成的台阶结构切割在其上形成的上电极膜,以用作上电极13。这种构造可以避免光处理。用于上电极的加工,以及用于清洁上电极表面的灰化工艺,以廉价地制造具有高电子发射效率和高产率的薄膜型电子源。;版权所有:(C)2001,JPO

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