METHOD FOR MEASURING AMOUNT OF STRAIN OF STRAINED MULTIPLE QUANTUM WELL STRUCTURE, AND MANUFACTURE OF THE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To manufacture a strained multiple quantum well structure, in which no misfit dislocation occurs by detecting strains produced in the structure.;SOLUTION: A mounts of strains produced in a strained multiple quantum well laminated structure 2 is measured by making into image the cross-sectional structure of the cleavage plane of a semiconductor wafer substrate 3, having the quantum well structure 2 perpendicular to the laminating direction, by using a scanning tunneling microscope (1: probe, 4: scanning mechanism) and checking the amplitude variation of the periodic structure of the cross-sectional profile of the quantum well structure in the laminating direction in the image. Then a high-performance strained multiple quantum well structure, in which grown layers do not accumulate strains, is manufactured based on the obtained results.;COPYRIGHT: (C)2000,JPO