A method of fabricating a nitride read only memory (NROM) chip, the method comprising the steps of: creating an oxide-nitride-oxide (ONO) layer on a substrate, wherein said ONO layer is formed of a bottom oxide layer, a nitride layer and a top oxide layer; laying down a bit line mask of phostoresist, said bit line mask formed generally in columns at least within a memory portion of the chip; removing at least a portion of said ONO layer wherever said photoresist is not present; implanting bit lines wherever said photoresist is not present and generally in columns; removing said photoresist; forming bit line oxides on top of said bit lines; and forming rows of polysilicon or polysilicide perpendicular to and on top of said bit line oxides and said remaining ONO layer.
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