A method for fabricating a variable bandgap infrared absorbing semiconductor material structure, comprising the steps of: forming a cadmium zinc telluride buffer layer on a substrate; forming on said buffer layer by epitaxial growth, alternating layers of mercury telluride, having the same lattice constant, and layers of cadmium zinc telluride wherein said buffer layer and said cadmium zinc telluride wherein said buffer layer and said cadmium zinc telluride layers have a zinc mole fraction to produce a lattice constant substantially similar to the lattice constant of said mercury telluride layers; and annealing said structure to interdiffuse said mercury telluride layers and said cadmium zinc telluride layers to produce a homogeneous mercury cadmium zinc telluride alloy.
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