A HYBRID ORGANIC-INORGANIC SEMICONDUCTOR DEVICE AND A METHOD OF ITS FABRICATION

摘要

A hybrid organic-inorganic semiconductor device and a method of fabrication thereof are presented. A semiconductor resistor is manufactured as a structure having an electrically conductive layer coated by an insulating layer, the conductivity of the semiconductor resistor depending on its surface potential. Two conducting pads are formed on the surface of the semiconductor resistor in a manner to make contacts with the electrically conducting layer. Further provided are gate pads insulated from the electrically conductive layer by the insulating layer, and identical organic multifunctional molecules, which form molecular bridges between the surface of the semiconductor resistor and the plurality of said gate pads.