Process for passivation of the crystal lattice superficial structural defects

摘要

The invention refers to the semiconductors technology, namely, to the processes for passivation of semi-conducting layers structural superficial defects and may be used for optimizing the technology for manufacturing of photodetectors with Schottky barrier or MOS structures. Summary of the invention consists in the electric isolation of defects by electrochemical oxidation of the "i"-layer surface at a high voltage, thereafter the formed oxide layer is chemically removed from the crystal defectless surface.Claims: 1Fig.: 1