A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component

摘要

The present invention relates to an opto-electronic quantum well component manufactured of III to V compounds and transmitting visible red light in the wave length range of 620 to 690 nm (nanometers). The quantum well component is made of at least one AlXGAYIn1-X-YP quantum well layer on the active range, wherein 0/=X/=1, 0/=Y/=1, and comprises substantially a tabular substrate, on at least other surface of which there is evaporated a film structure having at least two layers. The component comprises a substantially tubular substrate, on at least one side of which there is evaporated a film structure having at least two layers. On the surface of the component substrate, on which the film structure is formed, the crystal direction differs from the direction (100), and the film structure is formed using the SSMBE (solid source molecular beam epitaxy) method.