METHOD FOR ETCH RATE ENHANCEMENT BY BACKGROUND OXYGEN CONTROL IN A SOFT ETCH SYSTEM

摘要

Invention is etching substrate (26) containing oxide layer to reduce activated oxygen within plasma (22) and maintain high soft etch rate in series of subsequent etches. Second substrate (28) in form of substrate ring, is utilized in processing chamber (12) and is etched in conjunction with first substrate (26) being processed. Substrate ring (28) is formed of material which, when etched, reacts with activated oxygen to form stable oxygen-containing compound which may be evacuated from system.