METHOD AND APPARATUS FOR DISTRIBUTING GAS WITHIN HIGH DENSITY PLASMA PROCESS CHAMBER TO ENSURE UNIFORM PLASMA

摘要

An improved plasma processing chamber (20) is provided, which includes plural rotatable arms (105). Each rotatable arm (105) of the plurality of rotatable arms (105) has plural orifices for distributing at least one processing gas into the plasma processing chamber (20). In one embodiment, the gas distributor (100) is immersed in the plasma and is located in relatively close proximity to the semiconductor wafer (70) or wafers to be processed. In another embodiment, the spacing between the gas distributor (100) and the wafer (70) additionally may be adjusted. In an alternative embodiment, the gas distributor (100) is electrically insulated from the rest of the plasma processing chamber (20) and is otherwise designed to facilitate RF biasing so it may be cleaned in situ by RF means (30).