5Ge3O11 FE layer and an upper electrode; wherein the FEM gate unit is sized on the gate junction region such that any edge of said BEM gate unit is a distance "D" from the edges of the source junction region and the drain junction region; an insulating layer, having an upper surface, overlying the junction regions, the FEM gate unit and the substrate; and source, drain and gate electrodes."/>
公开/公告号EP0936675A3
专利类型
公开/公告日2001-08-08
原文格式PDF
申请/专利号EP19980310500
申请日1998-12-21
分类号H01L29/51;H01L21/336;H01L29/78;H01L21/02;
国家 EP
入库时间 2022-08-22 01:16:34