METHOD FOR INCREASING THE VERY-LARGE-SCALE-INTEGRATED VLSI CAPACITOR SIZE ON BULK SILICON AND SILICON-ON-INSULATOR SOI WAFERS AND STRUCTURE FORMED THEREBY

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form an inexpensive capacitor without additional cost, and to increase the density of the capacitor by increasing a ratio of a silicon width to an interval between adjacent islands so that a sub-lithography characteristic is patterned. CONSTITUTION: At least one conductive island having a predetermined sidewall angle in a conductive substrate is formed. A dielectric material is formed on at least one conductive island. A conductive material is formed on the dielectric material. A contact between the conductive material and at least one conductive island is formed.