METHOD FOR FORMING LOWER ELECTRODE OF CONCAVE TYPE CAPACITOR

摘要

PURPOSE: A method for forming a lower electrode of a concave type capacitor is to optionally form a lower electrode only inside a concave using a bottom layer and a spacer within the concave so that a series of processes for forming the lower electrode is removed and a total process is simplified. CONSTITUTION: An interlayer dielectric(24) is formed on a semiconductor substrate(22). On the interlayer dielectric is formed the first faster growth layer(FGL)(26) acting as a bottom layer of a concave. Each of the interlayer dielectric and the first FGL are patterned to expose the surface of the substrate so that a contact hole is formed. In the contact hole is formed a plug(28) for connecting between the substrate and the lower electrode. On the resultant structure formed a mold layer(30) for forming the lower electrode pattern. The mold layer is patterned to form a concave for the lower electrode pattern. On the side of the concave is provided a spacer(32) consisting of the second faster growth layer. On the resultant structure is deposited a conductive layer(34) for the lower electrode and thereby the lower electrode is formed inside the concave.