METHOD OF MAKING FERROELECTRIC THIN FILM FERROELECTRIC CAPACITOR FERROELECTRIC MEMORY CELL AND METHOD FOR FABRICATING FERROELECTRIC MEMORY

摘要

PURPOSE: A method of making ferroelectric thin film, ferroelectric capacitor, ferroelectric memory and a method for fabricating ferroelectric memory are provided to manufacture a laminar ferroelectrics thin film of non-c-axis orientation by a Sol-Gel process. CONSTITUTION: A manufacturing method for a ferroelectrics thin film comprises a process where a ferroelectrics thin film(13) having a laminar structure of random orientation is formed on the surface of a conductive layer(12) where at least a surface comprises a globular crystal structure. The ferroelectrics thin film is formed by providing, on its surface, a precursor solution containing an organic metal compound which comprises a small amount of at least one element among Mn, La, Ce, and Dy before sintered at 700 deg.C or below. The thin film is formed on a lower part electrode having a globular crystal structure at its surface to form a ferroelectrics capacitor or ferroelectrics memory.