METHOD OF ELECTRON-BEAM EXPOSURE AND MASK AND ELECTRON-BEAM EXPOSURE SYSTEM USED THEREIN

摘要

PURPOSE: To improve dimensional precision by making adjustment of auxiliary exposure for proximity effect correction easy, in a lithography process of manu facturing a semiconductor device. CONSTITUTION: In an electron beam exposure method of a dividing transfer system, a specified pattern is divided into a plurality of small regions, a partial pattern is formed every small region, exposure is performed every small region and the specified pattern is transferred. A process wherein exposure is performed every small region and the partial pattern is transferred, and a process wherein auxiliary exposure is performed by defocusing a reversal pattern beam of the partial pattern every transfer region of the partial pattern, and proximity effect due to pattern exposure is corrected, are executed.