Forming method of Ru film using chemical vapor deposition with changing process conditions and Ru film formed thereby

摘要

PURPOSE: A method for manufacturing a ruthenium layer by a chemical vapor deposition(CVD) method while varying a process condition is provided to improve step coverage and surface morphology, by initially depositing a ruthenium layer of which a nuclear formation rate is faster than a growth rate, and by afterwards depositing a ruthenium layer of which the growth rate is faster than the nuclear formation rate. CONSTITUTION: While the pressure inside a deposition chamber is maintained at the first pressure and the flow rate of oxygen gas is maintained at the first flow rate, a ruthenium layer is deposited. While the pressure inside the deposition chamber is maintained at the second pressure and the flow rate of oxygen gas is maintained at the second flow rate, a ruthenium layer is deposited. The first pressure is higher than the second pressure, and the first flow rate is greater than the second flow rate.