首页> 外国专利> MULTI QUANTUM WELL STRUCTURED PASSIVE OPTICAL WAVEGUIDE INTEGRATED VERY HIGH SPEED OPTICAL MODULATOR, MANUFACTURING METHOD THEREOF AND OPTICAL MODULATING METHOD USING THE SAME

MULTI QUANTUM WELL STRUCTURED PASSIVE OPTICAL WAVEGUIDE INTEGRATED VERY HIGH SPEED OPTICAL MODULATOR, MANUFACTURING METHOD THEREOF AND OPTICAL MODULATING METHOD USING THE SAME

机译:集成了非常高速光学调制器的多量子结构良好的无源光波导,其制造方法和使用其的光调制方法

摘要

Purpose: a ultrahigh speed optical modulator is arranged to prevent the degeneration of crystal defect therefore device by regrowth process without regrowth process using identical one its manufacturing method and optical modulating method by providing passive optical waveguide integrated optic modulator. Construction: a ultrahigh speed optical modulator includes the first coating in a semiconductor substrate, a multi-quantum pit structure light absorbing layer (11A) on a middle section of the first coating, passive optical waveguide (11B) on the first coating and in light absorbing layer two sides, the second coating (13) on light absorbing layer and passive optical waveguide, in an interface of light absorbing layer and an insulating layer (14) for passive optical waveguide, one electrode, it is used to apply the voltage on light absorbing layer and passive optical waveguide, anti-reflection layer near the first coating, passive optical waveguide and the second coating. Light absorbing layer and passive optical waveguide multi-quantum pit structure semiconductor layer having the same.
机译:目的:设置超高速光调制器以防止晶体缺陷的退化,因此通过使用无源光波导集成光调制器,使用与制造方法和光调制方法相同的方法,通过无生长过程的无再生过程的器件进行晶体再生。结构:超高速光调制器包括:位于半导体基板中的第一涂层,位于第一涂层中间部分的多量子坑结构光吸收层(11A),位于第一涂层中且处于光中的无源光波导(11B)吸收层的两侧,在光吸收层和无源光波导上的第二涂层(13),在光吸收层和无源光波导的绝缘层(14)的界面上,一个电极,用于在其上施加电压光吸收层和无源光波导,靠近第一涂层的抗反射层,无源光波导和第二涂层。光吸收层和具有该光吸收层的无源光波导多量子坑结构半导体层。

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