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PLANAR TYPE TRIAC DEVICE AND METHOD FOR FABRICATING THE SAME

机译:平面型三端双向可控硅器件及其制造方法

摘要

PURPOSE: A planar type TRIAC(Triode AC Switch) device and a method for fabricating the same are provided to perform the operating mode 4 by improving a characteristic of a gate trigger. CONSTITUTION: The first and the second base regions(12,12a) of P type are formed on both sides of an N type silicon substrate(10). The first and the second conductive layers(14',14a') as two N type dopant layers are formed on the first base region(12). The third conductive layer(15) as one N type dopant layer is formed on the second base region(12a). The first main electrode and a gate electrode(G) are formed on upper portions of the first conductive layer(14') and the third conductive layer(15) in order to cover a surface of the first base region(12). The second gate electrode(T2) is formed on the second conductive layer(14a') in order to cover a whole surface of the second base region(12a).
机译:目的:提供一种平面型TRIAC(三极管AC开关)器件及其制造方法,以通过改善栅极触发的特性来执行操作模式4。组成:P型的第一和第二基极区(12,12a)形成在N型硅衬底(10)的两侧。在第一基极区域(12)上形成作为两个N型掺杂剂层的第一和第二导电层(14',14a')。在第二基极区域(12a)上形成作为一个N型掺杂剂层的第三导电层(15)。为了覆盖第一基极区域(12)的表面,在第一导电层(14')和第三导电层(15)的上部形成有第一主电极和栅电极(G)。为了覆盖第二基极区域(12a)的整个表面,在第二导电层(14a’)上形成第二栅电极(T2)。

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