METHOD FOR MANUFACTURING TRIAC DEVICE OF PLANAR TYPE

摘要

PURPOSE: A method for manufacturing a triac device of planar type is provided to improve internal pressure and leakage current property by preventing surface defects of a substrate and contaminant due to a positive layer of an oxide layer facing to the substrate. CONSTITUTION: A first oxide layer is formed on both side of a substrate of an N-type. A device isolation region is formed by implanting selectively a P-type ion impurity. After removing a first oxide layer of one side of the substrate, a first semiconductor layer(30) for forming a base is formed by implanting the P-type ion impurity. After removing the first oxide layer of the other side, a third semiconductor layer(34) for forming the base is formed by implanting the P-type impurity ion into the semiconductor layer using the same as a mask. A fourth semiconductor layer(35) for forming a cathode is formed by implanting an N-type impurity ion into the third semiconductor layer. The remaining first oxide layer is removed. After forming a defect trapping layer on a lower portion of the second semiconductor layer, the surface defect of the substrate existing at the opposite side of the second semiconductor layer is trapped by heat treating the same and the defect trapping layer is removed. A second oxide layer(38) is formed on the removed semiconductor layer of the surface defect to expose the fourth semiconductor layer. A first electrode(39) contacting to the fourth semiconductor layer and a second electrode(40) contacting to the first semiconductor layer are formed.