In accordance with the present invention, a non-destructive read three element BICMOS gain cell for a DRAM memory having two FETs and one bipolar element is disclosed. These gain cells have improved access time (reduced latency), can operate for longer periods of time before refresh operations are required, require less storage capacitance than conventional DRAM cells, and are lower than current manufacturing costs. It can be commercialized as. In a preferred embodiment 1, the gain cell comprises an n-channel metal oxide semiconductor field effect write transistor whose gate is connected to the write word line WLw. The drain of the write transistor is connected to a storage node Vs having an associated storage capacitance Cs, the source of which is connected to the write bit line BLw. The gate of the n-channel metal oxide semiconductor field effect read transistor is connected to the storage node Vs, the source of which is connected to the read word line WLr. The base of the PNP transistor is connected to the drain of the read transistor, and its emitter is connected to the read bit line BLr. Embodiment 2 consists of a p-channel FET and an NPN transistor.
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