Magnetron sputter source - where difference of radii of electron traps in sputtering source plane is function of distance of this plane from workpiece to be coated

摘要

The sputtering arrangement incorporates a rotationally symmetric magnetron sputter source (1) and a holding arrangement (10, 11) for a disk-shaped workpiece (9). The source (1) has at least two ring-shaped electron traps respectively with radii (R1, R2) in the sputtering source plane (6, 7) which is at a distance (d) from the workpiece. The ratio (R2-R1)/d lies between 0.8 and 3.0.