PLANER MAGNETRON SPUTTERING APPARATUS AND PLANER MAGNETRON SPUTTERING FILM DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a planer magnetron sputtering apparatus which can control the film thickness highly precisely.;SOLUTION: A direct current voltage is applied to a target 4 by a direct current powder source 7, and the applied voltage is controlled in a constant voltage mode so as to be kept constant during film deposition. The current value of the target during film deposition is detected by an ampere meter 9, and the integrated value of the current value of the target is calculated by a current integration part 10b of a control device 10. When the current integration value of the target after the start of deposition of the film becomes a prescribed value, the deposition of the film is finished. By thus detecting an end point based on the current integration value of the target, that is in proportion with the film thickness, the film thickness can be controlled in a high precision even when the deposition rate is varied during film deposition and the fluctuation of the film thickness between batches can be reduced.;COPYRIGHT: (C)2007,JPO&INPIT