Electrical contact on semiconductor materials comprises binary or ternary metal alloy having melting point which matches process temperature

摘要

An electrical contact on semiconductor materials comprises a binary or ternary metal alloy having a melting point of 600-1000[deg]C which matches the process temperature. Independent claims are also included for the following: (A) the production of an electrical contact comprising depositing the metal alloy by sputtering or vaporizing in a vacuum; and (B) a layer sequence consisting of a Ti-Al alloy arranged on the semiconductor material; a nitrided, oxidized or carburized Ti-Al alloy; an adhesive layer; and a non-oxidizing metallic covering layer.