首页> 外国专利> Circuit arrangement for discharging a capacitance charged to a high voltage to a low voltage controlled by means of a control unit

Circuit arrangement for discharging a capacitance charged to a high voltage to a low voltage controlled by means of a control unit

机译:通过控制单元将充有高电压的电容放电到低电压的电路装置

摘要

The aim of the invention is to discharge a first capacitor (CH) from a high voltage (VH) to a low voltage (VL). To this end, the one electrode of the first capacitor (CH) is linked with the one electrode of a second capacitor (CL) via a FET (P1) path. The other two electrodes of the two capacitors (CH, CL) are applied to a reference potential. A voltage source (UL) with its internal resistance (RL) is disposed in parallel to the second capacitor (CL). A discharge path leads from the one electrode of the first capacitor (CH) from the paths of two FET (P2, M1) and a protective resistor (R) to the reference potential. A current path leads from the one electrode of the second capacitor (CL) to the reference potential via the paths of two additional FET (P3, M2 or M3). A control unit (SE) switches on the discharge path. Once the voltage of the first capacity (CH) has decreased to the required lower value (VL), the discharge path is blocked while a holding path is opened.
机译:本发明的目的是将第一电容器(CH)从高压(VH)放电到低压(VL)。为此,第一电容器(CH)的一个电极经由FET(P1)路径与第二电容器(CL)的一个电极链接。将两个电容器(CH,CL)的其他两个电极施加到参考电位。具有内部电阻(RL)的电压源(UL)与第二电容器(CL)并联设置。放电路径从第一电容器(CH)的一个电极从两个FET(P2,M1)和保护电阻器(R)的路径通向参考电位。电流路径从第二电容器(CL)的一个电极通过两个附加FET(P3,M2或M3)的路径引向参考电位。控制单元(SE)接通放电路径。一旦第一电容(CH)的电压减小到所需的较低值(VL),则放电路径被阻塞,同时保持路径被打开。

著录项

  • 公开/公告号DE10006517A1

    专利类型

  • 公开/公告日2001-08-23

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20001006517

  • 发明设计人 BLOCH MARTIN;VEGA-ORDONEZ ESTHER;

    申请日2000-02-15

  • 分类号H02M3/10;

  • 国家 DE

  • 入库时间 2022-08-22 01:09:58

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