Heterojunction-type field effect transistor for portable telephone, has gate electrode formed over p-type low resistance area of barrier layer inbetween source and drain electrodes

摘要

The barrier layer (6) is formed on carrier supply layer (5a) and has band gap narrower than the carrier supply layer (5a). Gate electrode (11) is formed inbetween source electrode (9) and drain electrode (10) formed over p-type low resistance area (13) of barrier layer (6). The low resistance area of barrier layer and barrier layer have opposite conductivity. An Independent claim is also included for field effect transistor manufacturing method.