Semiconductor image sensor used as a CMOS sensor comprises a semiconductor substrate, a photodiode, transistor, insulating layer and an optical layer

摘要

Semiconductor image sensor comprises a semiconductor substrate (210) which is divided into a light determining region and a periphery switching region; a photodiode (220) provided above the light determining region (212); at least one transistor (230) provided above the periphery switching region (214); at least one insulating layer (240) provided above the diode and the transistor; and an optical layer (270) on the insulating layer to efficiently transfer light to the photodiode. Preferred Features: The optical layer is made of tetraethoxyorthosilicate and is formed by PECVD process.