Solid-state image sensor with vertical charge coupled device(s) - has photodiode array on semiconductor substrate, transfer gates formed on insulating layers and zigzag metal wiring

摘要

The sensor includes photodiodes (41) which have impurities of one conductivity, while the transfer gates (55) have impurities of second conductivity. One gate side is in contact with the photodiodes. VCCDs have first conductivity impurities and are in contact with the transfer gate other side. Channel-shaped separating layers (57) with second conductivity impurities are in contact with the photodiode other sides. On the substrate surface an insulating layer (58) is formed over the VCCDs, while a second such layer (60) covers second gates (45). A light screening layer (47) covers the sections not belonging to the photodiodes. USE/ADVANTAGE -For video camera, medical applications etc. Prevention of smear phenomenon by effective light screening.