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Boundary layer voltage reducing device for IC package, has ring portion with high thermal coefficient and opening having form and size corresponding to external perimeter of IC at given temperature
Boundary layer voltage reducing device for IC package, has ring portion with high thermal coefficient and opening having form and size corresponding to external perimeter of IC at given temperature
A ring portion with a thermal expansion coefficient higher than that (thermal expansion coefficient) of the IC (502a), is provided with an opening having a form and a size corresponding to the external perimeter of the IC at a given temperature. An Independent claim is also included for a boundary layer voltage reduction method.
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