Flash memory device with programming state diagnosis circuit, includes column drive circuit and programming state diagnosis circuit for verifying data bits from column drive are associated with programming state

摘要

Non-volatile semiconductor memory devices with a programming state diagnosis device can suffer from force tripping of one of the pull-down transistors which are coupled to the complementary outputs, during the programming verification operation with subsequent indication of a programming error. To avoid such problems,. a column drive circuit for operating the columns, in parts, is provided and the programming state diagnosis circuit establishes whether all the data bits which are outputted by the column drive circuit are associated with a programming state, during the programming success/failure verification operation.