Non-volatile ferroelectric memory e.g. FRAM, DRAM, has main word line driver which outputs control signals to activate any one local word line driver

摘要

The cell array selection output by local X-decoder (100), is input selectively to corresponding cell arrays (93,99) through respective local word line drivers (95,97). A main word line driver (91) outputs control signals to activate one of the local word line drivers. An Independent claim is also included for circuit for operating non-volatile ferroelectric memory.