Virtual channel synchronized with a dynamic RAM for driving memory cells uses a semiconductor memory device with a base cell structure for a word driver, a main decoder and a reader booster for reading out information from the cells.

摘要

A semiconductor memory device has a base cell structure for a word driver to drive memory cells as well as a main decoder and a reader booster for reading out information from the memory cells. Two adjacent word driver base cells (13,14) have eight word lines. Driver signals (RA1-RA4) correspond to lower order 2-bits in a line address as well as in first (11) and second (12) main words of lower order than selection signals for higher order bits in the line address.