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Superjunction semiconductor structure includes two layers of pn junctions in area contact, junctions in the first layer being closer together than those in the second

机译:超结半导体结构在面接触中包括两层pn结,第一层中的结比第二层中的结更靠近

摘要

A low resistance layer (1) includes zones with differing types of conductivity (8a, 8b) defining intervening pn junctions. A second layer having zones with differing types of conductivity (18a, 18b) in alternation, defines further pn junctions and contacts an area of the first. Junctions in the second layer, have greater spacing than those in the first.
机译:低电阻层(1)包括具有不同类型的导电性的区域(8a,8b),这些区域限定了中间的pn结。第二层具有交替具有不同类型的导电性的区域(18a,18b),该第二层进一步限定了pn结并接触第一层的区域。第二层的结点比第一层的结点具有更大的间距。

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