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Brief description of embodiments of the films and dielectric structures oriented at the request

机译:根据要求定向的薄膜和介电结构的实施方案的简要说明

摘要

During deposition, a voltage is applied to the substrate support (30). This is controlled suitably to impose crystalline orientation in the layers deposited. Preferred Features: The voltage applied is varied, during deposition. It is applied to the substrate support, or electrodes (32) upon it, and alternates between a zero- and a non-zero value. The non-zero value is approximately 10% of the RF voltage amplitude. It is 150-300 V. The deposit can be polarized. The material is ferro-electric. Voltage is applied to the electrodes of the substrate (32) or the substrate support (30); these are shaped to adjust crystalline orientation in a plane parallel to the substrate. The substrate is amorphous or crystalline. Temperature of operation is below 400 deg C.
机译:在沉积期间,将电压施加到衬底支撑件(30)。适当地控制这以在沉积的层中施加晶体取向。优选特征:在沉积过程中施加的电压是变化的。将其施加到基板支架或基板支架上的电极(32),并在零和非零值之间交替。非零值约为RF电压幅度的10%。它是150-300V。沉积物可以极化。该材料是铁电的。将电压施加到基板(32)或基板支撑件(30)的电极上;这些被成形以调节平行于衬底的平面中的晶体取向。基底是无定形的或结晶的。工作温度低于400摄氏度。

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