Brief description of embodiments of a device comprising a stack of quantum boxes on a silicon substrate or monocrystalline germanium

摘要

The invention concerns a method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate, and the electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites. The invention is applicable to devices comprising layers of planes of quantum drops.